em6k6 transistor 1/3 1.8v drive nch+nch mosfet em6k6 z structure z dimensions (unit : mm) silicon n-channel mosfet z applications switching z features 1) the mosfet elements are independent, eliminating mutual interference. 2) mounting cost and area can be cut in half. 3) low on-resistance. 4) low voltage drive (1.8v) makes this device ideal for portable equipment. z packaging specifications z equivalent circuit t2r 8000 em6k6 type package code basic ordering unit (pieces) tapin g z absolute maximum ratings (ta=25 c) parameter v v ma mw / total c ma c v dss v gss p d tch i d i dp tstg symbol 20 8 300 600 150 mw / element 120 150 ?55 to +150 limits unit ? 1 pw10s, duty cycle1% ? 2 each terminal mounted on a recommended land. drain?source voltage gate?source voltage drain current total power dissipation channel temperature storage temperature continuous pulsed ? 1 ? 2 z thermal resistance parameter c/w / total rth(ch-a) symbol limits unit channel to ambient 833 c/w / element 1042 ? each terminal mounted on a recommended land ? abbreviated symbol : k06 emt6 each lead has same dimensions (1) ? gate protection diode tr1 tr2 gate protection diode ? ? a protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. use the protection circuit when rated voltages are exceeded. (1)tr1 source (2)tr1 gate (3)tr2 drain (4)tr2 source (5)tr2 gate (6)tr1 drain (2) (3) (4) (5) (6)
em6k6 transistor 2/3 z electrical characteristics (ta=25 c) parameter symbol i gss v (br)dss i dss v gs(th) r ds(on) c iss |y fs | c oss c rss min. ? 20 ? 0.3 ? ? 400 ? ? ? ? ? ? 0.7 25 ? 10 10 10 ? 1.0 1.0 1.0 ? 0.8 1.2 ? ? ? ? av gs = 8v, v ds =0v i d =1ma, v gs =0v v ds =20v, v gs =0v v ds =10v, i d =1ma i d =300ma, v gs =4.0v i d =300ma, v gs =2.5v v ds =10v i d =300ma, v ds =10v v gs =0v f=1mhz v a v ? ? ? 1.0 1.4 i d =300ma, v gs =1.8v ? pf ms pf pf t d(on) ? 5 ? i d =150ma, v dd 10v ns t r ? 10 ? v gs =4.0v ns t d(off) ? 15 ? r l =67? ns t f ? 10 ? r g =10? ns typ. max. unit conditions gate-source leakage drain-source breakdown voltage zero gate voltage drain curren t gate threshold voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time static drain-source on-state resistance ? ? pulsed ? ? ? ? ? z body diode characteristics (source-drain) (ta=25 c) v sd ?? 1.2 v i s = 100ma, v gs =0v forward voltage parameter symbol min. typ. max. unit conditions ? ? pulsed z electrical characteristic curves 0.0 0.5 1.0 1.5 0.00001 0.0001 0.001 0.01 0.1 1 drain current : i d (a) gate-source voltage : v gs (v) fig.1 typical transfer characteristics ta=125c 75c 25c ?25c v ds =10v pulsed static drain-source on-state resistance : r ds(on) (m?) drain current : i d (a) 0.1 1 10 0.01 0.1 1 fig.2 static drain-source on-state resistance vs. drain current () ta=125c 75c 25c ?25c v gs =4v pulsed static drain-source on-state resistance : r ds(on) (m?) drain current : i d (a) 0.1 1 10 0.01 0.1 1 fig.3 static drain-source on-state resistance vs. drain current (?) ta=125c 75c 25c ?25c v gs =2.5v pulsed
em6k6 transistor 3/3 static drain-source on-state resistance : r ds(on) (m?) drain current : i d (a) 0.1 1 10 0.01 0.1 1 fig.4 static drain-source on-state resistance vs. drain current (??) ta=125c 75c 25c ?25c v gs =1.8v pulsed source current : i s (a) source-drain voltage : v sd (v) 1.5 1 0.5 0.0 0.01 0.1 1 ta=125c 75c 25c ?25c fig.5 source current vs. source-drain voltage v gs =0v pulsed 0.01 0.1 1 10 100 1 100 capacitance : c (pf) drain-source voltage : v ds (v) 10 c iss c oss c rss ta =25c f=1mh z v gs =0v fig.6 typical capacitance vs. drain-source voltage 0.01 0.1 10 swithing time : t (ns) drain current : i d (a) 100 1000 1 1 fig.7 switching characteristics t d(off) t r t d(on) t f ta =25c v dd =10v v gs =4v r g =10? pulsed z switching characteristics measurement circuit fig.8 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd 90% 50% 10% 90% 10% 50% pulse width 10% v gs v ds 90% t f t off t d (off) t r t on t d (on) fig.9 switching time waveforms
notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. appendix1-rev2.0 thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact your nearest sales office. rohm customer support system the americas / eupope / asia / japan contact us : webmaster@ rohm.co. jp www.rohm.com copyright ? 2007 rohm co.,ltd. the products listed in this document are designed to be used with ordinary electronic equipment or de vices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. it is our top priority to supply products with the utmost quality and reliability. however, there is always a chance of failure due to unexpected factors. therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. rohm cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the notes specified in this catalog. 21, saiin mizosaki- cho, ukyo-ku, kyoto 615-8585, japan tel : +81-75-311-2121 fax : +81-75-315-0172 appendix
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